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| NTE5586 & NTE5588 Silicon Controlled Rectifier for Phase Control Applications Electrical Characteristics: (Maximum values @ TJ = +125C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRRM NTE5586 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5588 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Non-Repetitive Peak Off-State Voltage, VDSM NTE5586 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE5588 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V Non-Repetitive Peak Reverse Blocking Voltage, VRSM NTE5586 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V NTE5588 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Average On-State Current (Half Sine Wave, TC = +85C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 226A RMS On-State Current, I(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A Continuous On-State Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 355A Peak One-Cycle, Non-Repetitive Surge Current (10ms Duration), ITSM 60% VRRM reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4650A VR 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5120A Maximum I2t for Fusing (VR 10V), I2t 10ms Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131,000A2sec 10ms Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97350A2sec Peak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM . . . . . . . . . . . . . . . 20A Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM . . . . . . . . . . . . . . 18V Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Average Gate Power, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Peak Gate Power (100s Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Rate of Rise of Off-State Voltage (To 80% VDRM, Gate Open), dv/dt . . . . . . . . . . . . . . . . . . 200V/s Rate of Rise of ON-State Current, di/dt (Gate Drive 20V, 20, with tr 1s, Anode Voltage 80% VDRM) Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/s Non-Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/s Peak On-State Voltage (ITM = 710A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.62V Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.92V Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.99m Repetitive Peak Off-State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Maximum Gate Current Required to Fire All Devices (VA = 6V, IA = 2A, TJ = +25C), IGT . . 150mA Maximum Gate Voltage Required to Fire All Devices (VA = 6V, IA = 2A, TJ = +25C), VGT . . . . . 3V Maximum Holding (VA = 6V, IA = 2A, TJ = +25C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Maximum Gate Voltage which will not Trigger any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . . . 0.25V Electrical Characteristics (Cont'd): (Maximum values @ TJ = +125C unless otherwise specified) Operating Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case (VF = Max Rating), RtnJC DC and 180 Sine wave . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12C/W 120 Rectangular wave . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.14C/W Thermal Resistance, Case-to-Heat Sink, RthC-HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04C/W 1.443 (36.68) Max (Across Corners) For No. 6 Screw Cathode Cathode (Red) 1.212 (30.8) Dia Max .156 (3.96) Max 1.077 (27.35) Max CCC CCC CCC 1.031 (26.18) Dia (Ceramic) .643 (16.35) For No. 6 Screw .350 (8.89) Dia Max Gate (White) 8.100 (205.74) Max (Terminals 1, 2, & 3) 3.625 (92.07) Max .630 (16.0) 3/4-16 UNF-2A (Terminal 4) Anode |
Price & Availability of NTE5588
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